Spin coated graphene films as the transparent electrode in organic photovoltaic devices
Identifieur interne : 002530 ( Main/Repository ); précédent : 002529; suivant : 002531Spin coated graphene films as the transparent electrode in organic photovoltaic devices
Auteurs : RBID : Pascal:12-0331131Descripteurs français
- Pascal (Inist)
- Dépôt centrifugation, Couche mince, Dispositif photovoltaïque, Electrode ITO, Mobilité porteur charge, Conductivité électrique, Transparence, Butyrique dérivé polymère, Verre spin, Dispersion, Hydrazine, Recuit, Résistivité couche, Polymère, Graphène, Oxyde d'indium, Oxyde d'étain, Thiophène dérivé polymère, Substrat verre, 8105U, 8460J, 7361, 8105T.
- Wicri :
- concept : Polymère.
English descriptors
- KwdEn :
- Annealing, Butyric derivative polymer, Carrier mobility, Dispersions, Electrical conductivity, Graphene, Hydrazine, Indium oxide, Indium tin oxide electrode, Photovoltaic cell, Polymers, Sheet resistivity, Spin glasses, Spin-on coating, Thin films, Thiophene derivative polymer, Tin oxide, Transparency.
Abstract
Many research efforts have been devoted to the replacement of the traditional indium-tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C61-butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spin coated graphene films as the transparent electrode in organic photovoltaic devices</title><author><name sortKey="Kymakis, E" uniqKey="Kymakis E">E. Kymakis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department & Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation></author><author><name sortKey="Stratakis, E" uniqKey="Stratakis E">E. Stratakis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department & Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH)</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials Science and Technology Department, University of Crete</s1><s2>Heraklion 710 03</s2><s3>GRC</s3><sZ>2 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion 710 03</wicri:noRegion></affiliation></author><author><name sortKey="Stylianakis, M M" uniqKey="Stylianakis M">M. M. Stylianakis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department & Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation></author><author><name sortKey="Koudoumas, E" uniqKey="Koudoumas E">E. Koudoumas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electrical Engineering Department & Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation></author><author><name sortKey="Fotakis, C" uniqKey="Fotakis C">C. Fotakis</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH)</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Heraklion, Crete</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0331131</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0331131 INIST</idno><idno type="RBID">Pascal:12-0331131</idno><idno type="wicri:Area/Main/Corpus">001968</idno><idno type="wicri:Area/Main/Repository">002530</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Butyric derivative polymer</term><term>Carrier mobility</term><term>Dispersions</term><term>Electrical conductivity</term><term>Graphene</term><term>Hydrazine</term><term>Indium oxide</term><term>Indium tin oxide electrode</term><term>Photovoltaic cell</term><term>Polymers</term><term>Sheet resistivity</term><term>Spin glasses</term><term>Spin-on coating</term><term>Thin films</term><term>Thiophene derivative polymer</term><term>Tin oxide</term><term>Transparency</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt centrifugation</term><term>Couche mince</term><term>Dispositif photovoltaïque</term><term>Electrode ITO</term><term>Mobilité porteur charge</term><term>Conductivité électrique</term><term>Transparence</term><term>Butyrique dérivé polymère</term><term>Verre spin</term><term>Dispersion</term><term>Hydrazine</term><term>Recuit</term><term>Résistivité couche</term><term>Polymère</term><term>Graphène</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Thiophène dérivé polymère</term><term>Substrat verre</term><term>8105U</term><term>8460J</term><term>7361</term><term>8105T</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Many research efforts have been devoted to the replacement of the traditional indium-tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>520</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spin coated graphene films as the transparent electrode in organic photovoltaic devices</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Transparent Conductive Materials (TCM 2010)</s1></fA09><fA11 i1="01" i2="1"><s1>KYMAKIS (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>STRATAKIS (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>STYLIANAKIS (M. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>KOUDOUMAS (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>FOTAKIS (C.)</s1></fA11><fA12 i1="01" i2="1"><s1>KIRIAKIDIS (George)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Electrical Engineering Department & Center of Advanced Materials and Photonics, Technological Educational Institute (TEI) of Crete, P.B 1939</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH)</s1><s2>Heraklion, Crete</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Materials Science and Technology Department, University of Crete</s1><s2>Heraklion 710 03</s2><s3>GRC</s3><sZ>2 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>University of Crete. Physics Department</s1><s3>GRC</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Foundation for Research and Technology - Hellas (FORTH). Institute of Electronic Structure and Lasers (IESL)</s1><s3>GRC</s3><s9>org-cong.</s9></fA18><fA20><s1>1238-1241</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000502898920150</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0331131</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Many research efforts have been devoted to the replacement of the traditional indium-tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A05T</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt centrifugation</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Spin-on coating</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Electrode ITO</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Indium tin oxide electrode</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Electrodo ITO</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Transparence</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Transparency</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Butyrique dérivé polymère</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Butyric derivative polymer</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Butírico derivado polímero</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Verre spin</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Spin glasses</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Dispersion</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Dispersions</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Hydrazine</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Hydrazine</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Recuit</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Annealing</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Résistivité couche</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Sheet resistivity</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Polymère</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Polymers</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Graphène</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Graphene</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Graphene</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Tin oxide</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8105U</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7361</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>254</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Symposia on Transparent Conductive Materials (TCM 2010)</s1><s3>Analipsi/Hersonissos, Crete GRC</s3><s4>2011-10-17</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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